unisonic technologies co., ltd 7N20 power m o sfet www.unisonic.com.tw 1 of 5 copyright ? 2012 unisonic technologies co., ltd qw-r502-811.b 7 a , 200v n-channel power mosfet ? descripti on t he u t c 7N20 is an n- c han nel e n h a n c ement mod e po w e r mosf et , providin g customer s w i th e x cell en t s w itchi ng p e rforman c e and mi nimum on-state res i stance. t h is de vice can also w i t h stan d high ener g y pu lse in the av ala n che a nd the c o mmutatio n mode. t he u t c 7n2 0 is ge ner all y appl ie d in lo w voltag e ap plic a t ions, such as dc motor controls , audio amplifi e rs and high efficienc y s w itc h in g dc/ dc convert e rs. ? features * lo w gate ch arge: 5.8n c (t yp.) * lo w c r ss: 10 pf (t yp.) * r ds (on) =0 .5 8 ? @v gs = 10v * fast s w itching * improved dv/ d t capa bil i t y ? sy mbol 2.drain 3.source 1.ga te ? or de r i ng i n form at i o n ordering n u m ber package pi n assi gn me nt packing lead free halogen free 1 2 3 7N20l-tn3-r 7N20g-tn3-r to-252 g d s tape reel 7N20l-tn3-t 7N20g-tn3-t to-252 g d s tube note: pin assignment: g: gate d: drain s: source http://
7N20 power m o sfet unisonic technologi es co., ltd 2 of 5 w w w . uniso nic.co m.t w q w - r 5 0 2 - 8 1 1 . b ? absolute maxi mu m ra ting s (t c = 25c, unle ss other w i s e specifie d) paramet er symbol rat i ngs unit drain -so u rce voltag e v ds s 200 v gate-source voltage v gss 25 v contin uo us dr ain curr ent t c = 25c i d 7 a pulse d drai n c u rrent (note 2) i dm 28 a avala n che c u r r ent (note 2) i ar 7 a singl e puls ed avala n che en e r g y (n ote 3) e as 62.5 mj po w e r diss i pat ion p d 2.5 w operatin g junc tion t e mperatu r e t j 150 c storage t e mperature t st g -55 ~ + 150 c note: 1. 2. 3. 4. absol u te ma xi mum ratings ar e those val ues be yo nd w h ich the dev ice cou l d be perm ane n t l y dam ag ed. absol u te ma xi mum ratings ar e stress ratings onl y an d functi onal devic e op erat io n is not i m plie d. repetitiv e rati ng : pulse w i dth limited b y m a xim u m juncti on temperature l =2.5mh, i as =7 a, v dd = 25v, r g =2 5 ? starting t j = 25c i sd 7.3a, di/dt 30 0a/ s, v dd bv ds s , starting t j = 25c ? th er mal dat a paramet er symbol ratings unit junction to ambient ja 50 c/w note: when m ounte d on the minimum p ad s i ze recomme n ded (pcb mo u n t) ? electric al ch ara cteri s tic s (t c = 25c, unless oth e r w is e specifi ed) paramet er symbol t es t conditions min t yp max unit off ch a r acteristics drain-s ource breakd o w n vo l t age bv d ss v gs =0 v, i d =250a 200 v drain-source leaka ge curr en t i ds s v ds = 200v, v gs = 0 v 1 a gate-source l eaka ge curr en t i gss v gs = 25v, v ds =0 v 1 00 n a on ch a r acteristics gate t h reshold voltag e v gs ( th ) v ds = v gs , i d =250a 1 3 v static drain-s o urce on-resist ance r ds ( on ) v gs = 10v, i d = 3 .5a 0.58 0.69 ? dyn a m ic parameters input cap a cita nce c iss v ds = 25v, v gs = 0 v, f= 1.0mhz 190 250 pf output capac itance c oss 60 75 pf reverse t r ansfer capac itanc e c rs s 10 13 pf switching pa r a meters t o tal gate charge q g v gs = 10v, v ds =100v, i d =7 a (note 1,2) 5.8 7.5 nc gate source charge q gs 1.4 nc gate drain c h arge q gd 2.5 nc t u rn-on dela y t i me t d ( on ) v dd = 50v, i d =7 a, r g =2 5 ? (note 1,2) 7 25 ns t u rn-on rise t i me t r 24 60 ns t u rn-off delay time t d ( off ) 13 35 ns t u rn-off fall-t i me t f 19 50 ns source- dr a i n diode ratings and characteristics maximum co ntinuo us drai n-s ource di od e fo rw ard current i s 7 a maximum pulsed drai n-so urc e diod e fo rw ard c u rren t i sm 28 a drain-s ource diod e f o r w ard voltage v sd i s =7 a, v gs =0 v 1 . 5 v notes: 1. pulse t est : pulse width 300 s, duty cycle 2% 2. essentially independent of operating temperature
7N20 power m o sfet unisonic technologi es co., ltd 3 of 5 w w w . uniso nic.co m.t w q w - r 5 0 2 - 8 1 1 . b ? test circuits and waveforms v ds + - dut r g dv/ d t co ntro l l e d by r g i sd co nt rol l e d b y p u l s e pe ri od v dd pe ak di ode reco very dv/d t t e st cir c uit & wavef o rms same type as dut i sd v gs l v gs (driver) i sd (dut) v ds (dut) d= gate pulse width ga te pulse pe rio d 10v di /d t bo dy dio de r e verse c u rre nt i rm bod y dio de re cove ry d v/d t v dd v sd bo dy diode f o rw ard vo ltag e drop i fm , bo dy d i o d e fo rw ard cu rr en t driver
7N20 power m o sfet unisonic technologi es co., ltd 4 of 5 w w w . uniso nic.co m.t w q w - r 5 0 2 - 8 1 1 . b ? t est circuits and wave form s (cont. ) 50k ? 300nf dut v ds 10v 12v cha r ge q gs q gd q g v gs v gs 200nf same type as du t 3ma gate charge test circuit gate charge waveforms resistive switching test circuit resistive switching waveforms 10v t p r g dut l v ds i d v dd t p v dd i as bv dss i d (t) v ds (t) tim e e as = 2 1 li as 2 bv ds s bv dss -v dd unc l a m pe d in duc ti v e s w i t c h ing te s t circ uit unc l a m pe d in duc ti v e s w i t c h ing wav e forms
7N20 power m o sfet unisonic technologi es co., ltd 5 of 5 w w w . uniso nic.co m.t w q w - r 5 0 2 - 8 1 1 . b ? typical characteristics drain current, i d (a) drain current, i d (a) drain-source on-state resistance ch aracte ri sti c s drai n cu rre n t, i d (a) drain to source voltag e, v ds (v) 0 1. 5 2. 5 4 0 0 .2 0.4 0 .6 0.5 2 3. 5 0.8 1 3 v gs =10v, i d =3.5a 1 0. 01 dra i n-so urc e vo l t ag e , v ds (v) drain current, i d (a) 10 1 0.1 0.1 10 s 60 100ms 10 0 t a= 25oc maximum safe operation area dc 10 1ms 10ms 100s r d s( o n ) li mi t u t c as s u m e s no r e s pon s i bility f o r equipm e n t f a il u r es th at r e s u lt f r om us ing pr oducts a t v a lue s that ex ceed, ev e n m o m entar ily , r a ted v a lues ( s uch a s m a x i m u m r a tings , oper ating condition r anges , or othe r par am eter s ) lis t ed in pr oducts s pecif ications of any and all u t c pr odu c t s des cr ibed or contained her ein. u t c pr oducts ar e not des igned f o r us e in lif e s upp or t appliances , dev i c es or s y s t e m s w her e m a l f unction of thes e pr o ducts can be r eas onably ex p ected to r es ult in per s onal injur y . r epr oduction in whole or in p a r t is p r ohibited w i thout the pr ior w r it t en cons ent of the copyr i ght ow n er . t he inf o r m ation pr es e n ted in this docum ent does not f o r m par t of any quotation or contr a ct, is believ e d to be accur a te and r e liable and m a y be changed w i thout notice.
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